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Variable Capacitance Diodes
MA2S377
Silicon epitaxial planar type
Unit : mm
For VCO and TCXO I Features
* SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.15 min.
0.15 min.
0.27 - 0.02
0.8 0.1
+ 0.05
1.3 0.1
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 12 20 150 -55 to +150 Unit
0.7 0.1
1.7 0.1
V mA C C
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Marking Symbol: 7
I Electrical Characteristics Ta = 25C 3C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(2V) CD(10V) Capacitance ratio Series resistance* CD(2V)/CD(10V) rD VR = 1 V, f = 470 MHz VR = 12 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz 2.80 1.10 2.20 0.40 Conditions Min Typ Max 10 3.40 1.50 2.80 0.60 Unit nA pF pF
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.13 - 0.02
+ 0.05
0.27 - 0.02
+ 0.05
1
MA2S377
CD VR
10 8 7 6 5 4 3 f = 1 MHz Ta = 25C
120 25C
Variable Capacitance Diodes
IF V F
1.030
CD Ta
f = 1 MHz
100
Diode capacitance CD (pF)
Forward current IF (mA)
1.020 Ta = 60C VR = 2 V
CD(Ta) CD(Ta = 25 )
- 40C 50
10 V 1.010
2
1.000
0.990
1
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
0 0.4
0.9
1.4
0.986 0
20
40
60
80
100
Reverse voltage VR (V)
Forward voltage VF (V)
Ambient temperature Ta (C)
IR Ta
100 VR = 28 V
10
Reverse current IR (nA)
1
0.1
0.01
0.001
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (C)
2

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